Vapor-liquid-solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission
Yazarlar (6)
Seyed Ebrahim Hashemi Amiri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Prof. Dr. Sunay TÜRKDOĞAN Yalova Üniversitesi, Türkiye
Praneeth Ranga
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Fan Fan
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Lin Gan
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Cun Zheng Nıng
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | European Physical Journal Special Topics (Q2) | ||
| Dergi ISSN | 1951-6355 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 01-2022 |
| Cilt / Sayı / Sayfa | 231 / 4 / 723–734 | DOI | 10.1140/epjs/s11734-021-00388-3 |
| Makale Linki | http://dx.doi.org/10.1140/epjs/s11734-021-00388-3 | ||
| Özet |
| Growth of high quality III–V compound nanowires using simple chemical vapor deposition method with safe, inexpensive precursors is extremely important for a wide range of applications from solar cells, detectors, to light emitting devices. However, the most-often used deposition approach using compound powers suffers from incongruent sublimation of group III and V elements, leading to premature exhaust of group V elements and eventually to defective, non-stoichiometric nanowires with poor electronic and optical properties. In this paper, we report new results of our efforts in resolving these challenges using as an example the growth of GaP nanowires, an important widegap semiconductor. Our results reveal fascinating roles played by the elemental P source in addition to GaP powder such as restoration of chemical balance, inhabit of the incongruent sublimation of GaP, and the growth of highly stoichiometric … |
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| Google Scholar | 3 |
| Scopus | 3 |
| Web of Science | 3 |