Vapor-liquid-solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission
Yazarlar (6)
Seyed Ebrahim Hashemi Amiri Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Prof. Dr. Sunay TÜRKDOĞAN Yalova Üniversitesi, Türkiye
Praneeth Ranga Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Fan Fan Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Lin Gan Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Cun Zheng Nıng Ira A. Fulton Schools Of Engineering, Amerika Birleşik Devletleri
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı European Physical Journal Special Topics (Q2)
Dergi ISSN 1951-6355 Dergi Bilgileri (2022)
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili Türkçe Basım Tarihi 01-2022
Kabul Tarihi 13-12-2021 Yayınlanma Tarihi 03-01-2022
Cilt / Sayı / Sayfa 231 / 4 / 723–734 DOI 10.1140/epjs/s11734-021-00388-3
Makale Linki http://dx.doi.org/10.1140/epjs/s11734-021-00388-3
UAK Araştırma Alanları
Yarı İletkenler
Özet
Growth of high quality III–V compound nanowires using simple chemical vapor deposition method with safe, inexpensive precursors is extremely important for a wide range of applications from solar cells, detectors, to light emitting devices. However, the most-often used deposition approach using compound powers suffers from incongruent sublimation of group III and V elements, leading to premature exhaust of group V elements and eventually to defective, non-stoichiometric nanowires with poor electronic and optical properties. In this paper, we report new results of our efforts in resolving these challenges using as an example the growth of GaP nanowires, an important widegap semiconductor. Our results reveal fascinating roles played by the elemental P source in addition to GaP powder such as restoration of chemical balance, inhabit of the incongruent sublimation of GaP, and the growth of highly stoichiometric …
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