Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior     
Yazarlar (2)
Prof. Dr. Sunay TÜRKDOĞAN Yalova Üniversitesi, Türkiye
Prof. Dr. Bayram KILIÇ Yalova Üniversitesi, Türkiye
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale
Dergi Adı Materials Research Express
Dergi ISSN 2053-1591 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce
Basım Tarihi 01-2018
Cilt No 5
Sayı 1
Sayfalar 15902 / 0
DOI Numarası 10.1088/2053-1591/aaa1c3
Makale Linki http://stacks.iop.org/2053-1591/5/i=1/a=015902?key=crossref.b7bd1cb9bba199e3faca3c281d80156d
Özet
We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.
Anahtar Kelimeler
crystal growth | semiconductors | oxide materials | thin films | optical materials | CuO/ZnO heterojunctions