A Facile Growth of Cu2ZnSnS4/ZnS Materials by Sulfurization ofStacked Co-Electroplated-Annealed Metallic Film(s) for PhotovoltaicApplications

TÜRKDOĞAN, Sunay

doi:10.1088/2053-1591/aabd61

A Facile Growth of Cu2ZnSnS4/ZnS Materials by Sulfurization ofStacked Co-Electroplated-Annealed Metallic Film(s) for PhotovoltaicApplications

Yazarlar (1)

Prof. Dr. Sunay TÜRKDOĞAN Yalova Üniversitesi, Türkiye

Makale Türü	Özgün Makale
Makale Alt Türü	SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale
Dergi Adı	Materials Research Express
Dergi ISSN	2053-1591 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler	SCI-Expanded
Makale Dili	İngilizce
Basım Tarihi	04-2018
Cilt No	5
Sayı	4
Sayfalar	45903 / 0
DOI Numarası	10.1088/2053-1591/aabd61
Makale Linki	http://stacks.iop.org/2053-1591/5/i=4/a=045903?key=crossref.f68a5b101cf3750c7576efea535f0997

Özet

In this paper, growth and characterization of functional Cu2ZnSnS4 (CZTS) and ZnS materials are demonstrated. We propose a versatile growth method that depends on the deposition of stacked metallic film by electroplating followed by sulfurization in Sulfur ambient at 500 °C. We have investigated the effect of direct and indirect sulfurization methods ZnS materials were grown as a proof of concept material to make the comparison between two methods. Indirect sulfurization was found to produce higher quality materials and therefore used for CZTS material growth, as well. The results show that CZTS and ZnS materials were grown with high crystal quality in wurtzite and zincblende structure form, respectively. CZTS materials have ∼1.49 eV direct-band gap energy, hydrophilic surface and possess p-type conductivity. All the results are in good agreement with the literature and we believe that our versatile growth method is superior to most of vacuum and non-vacuum based growth methods when the large-scale production and low-cost fabrication are of particular interests. The developed method might not only be promising to grow CZTS and ZnS, but also other semiconductors that can be employed for various optoelectronic/electronic devices.

Anahtar Kelimeler

BM Sürdürülebilir Kalkınma Amaçları

Atıf Sayıları
WoS	2
SCOPUS	2

A Facile Growth of Cu2ZnSnS4/ZnS Materials by Sulfurization ofStacked Co-Electroplated-Annealed Metallic Film(s) for PhotovoltaicApplications

Dergi Adı	Materials Research Express
Yayıncı	IOP Publishing Ltd.
Açık Erişim	Evet
E-ISSN	2053-1591
CiteScore	3,7
SJR	0,434
SNIP	0,653

A Facile Growth of Cu2ZnSnS4/ZnS Materials by Sulfurization ofStacked Co-Electroplated-Annealed Metallic Film(s) for PhotovoltaicApplications

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