Growth of InGaAsP Alloy Nanowires for Emission from Visible to Mid Infrared Wavelengths
Yazarlar (6)
Hashemı Amırı Seyed Ebrahım
Prof. Dr. Sunay TÜRKDOĞAN Yalova Üniversitesi, Türkiye
Zhıcheng Lıu
Fan Fan
Cun Zheng Nıng
Sinan Gürsoy
| Bildiri Türü | Tebliğ/Bildiri | Bildiri Dili | İngilizce |
| Bildiri Alt Türü | Özet Metin Olarak Yayınlanan Tebliğ (Uluslararası Kongre/Sempozyum) | ||
| Bildiri Niteliği | Alanında Hakemli Uluslararası Kongre/Sempozyum | ||
| Kongre Adı | The Electrochemical Society | ||
| Kongre Tarihi | 11-10-2015 / 15-10-2015 | ||
| Basıldığı Ülke | Basıldığı Şehir | ||
| Bildiri Linki | https://ecs.confex.com/ecs/228/webprogram/Paper60010.html | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| III-V compound semiconductor nanowires (NWs) have attracted considerable attention during the past decades as the building block of next generation of optoelectronic devices. Their tunable direct band gap, high carrier mobility and excellent mechanical properties make them superior candidates to other semiconductor materials (1). Having direct band gaps, most of the III-V NWs can be rationally designed and synthesized to cover a wide range of the band gap energy by tuning the composition. Full composition growth of InxGa1-xN on a single substrate covering the band gap from near UV to mid-IR was achieved for the first time through composition gradient of source materials by Kuykendall et al.(2). Recently we have been able to grow CdSSe and ZnCdSSe NWs alloys using dual gradient method (3,4). Even though alloy nanowires with tunable optical properties for visible wavelengths have received … |
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